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    <dc:date>2013-05-24T04:06:10Z</dc:date>
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    <title>Nonlinear c-axis transport in Bi2Sr2CaCu2O8+delta from two-barrier tunneling</title>
    <link>http://hdl.handle.net/2307/376</link>
    <description>&lt;Title&gt;Nonlinear c-axis transport in Bi2Sr2CaCu2O8+delta from two-barrier tunneling&lt;/Title&gt;
&lt;Authors&gt;Giura, Maurizio; Pompeo, Nicola; Silva, Enrico&lt;/Authors&gt;
&lt;Issue Date&gt;2009-04-01&lt;/Issue Date&gt;
&lt;Is part of&gt;Physical Review B&lt;/Is part of&gt;
&lt;Volume&gt;79&lt;/Volume&gt;
&lt;Pages&gt;144504&lt;/Pages&gt;
&lt;Abstract&gt;Motivated by the peculiar features observed through intrinsic tunneling spectroscopy of Bi2Sr2CaCu2O8+delta mesas in the normal state, we have extended the normal-state two-barrier model for the c-axis transport [M. Giura , Phys. Rev. B 68, 134505 (2003)] to the analysis of dI/dV curves. We have found that the purely normal-state model reproduces all the following experimental features: (a) the parabolic V dependence of dI/dV in the high-T region (above the conventional pseudogap temperature), (b) the emergence and the nearly voltage-independent position of the "humps" from this parabolic behavior by lowering the temperature, and (c) the crossing of the absolute dI/dV curves at a characteristic voltage V-x. Our findings indicate that conventional tunneling can be at the origin of most of the uncommon features of the c-axis transport in Bi2Sr2CaCu2O8+delta. We have compared our calculations to experimental data taken in severely underdoped and slightly underdoped Bi2Sr2CaCu2O8+delta small mesas. We have found good agreement between the data and the calculations, without any shift of the calculated dI/dV on the vertical scale. In particular, in the normal state (above T-*) simple tunneling reproduces the experimentaldI/dV quantitatively. Below T-* quantitative discrepancies are limited to a simple rescaling of the voltage in the theoretical curves by a factor similar to 2. The need for such modifications remains an open question, that might be connected to a change of the charge of a fraction of the carriers across the pseudogap opening.&lt;/Abstract&gt;</description>
    <dc:date>2009-03-31T22:00:00Z</dc:date>
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