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    <dc:date>2013-05-22T09:14:54Z</dc:date>
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    <title>Conduction band intersubband transitions in Ge/SiGe quantum wells</title>
    <link>http://hdl.handle.net/2307/314</link>
    <description>&lt;Title&gt;Conduction band intersubband transitions in Ge/SiGe quantum wells&lt;/Title&gt;
&lt;Authors&gt;De Seta, Monica; Capellini, Giovanni; Busby, Yan; Evangelisti, Florestano; Ortolani, Michele; Virgilio, Michele; Grosso, Giuseppe; Pizzi, Giovanni; Nucara, Alessandro; Lupi, Stefano&lt;/Authors&gt;
&lt;Issue Date&gt;2009-08&lt;/Issue Date&gt;
&lt;Is part of&gt;Applied Physics Letters&lt;/Is part of&gt;
&lt;Volume&gt;95&lt;/Volume&gt;
&lt;Pages&gt;051918-051918-3&lt;/Pages&gt;
&lt;Abstract&gt;In this letter we present the experimental evidence of intersubbandabsorption in the conduction band of compressively strained germaniumquantum wells bounded by Ge-rich SiGe barriers. The measured absorptionenergies are in the terahertz range and are interpreted by means oftight binding calculations which include self-consistent band-bendingand depolarization effects. From the comparison of experimental andnumerical results a conduction band offset along the L line of about120 meV has been estimated for the studied heterostructures.&lt;/Abstract&gt;</description>
    <dc:date>2009-07-31T22:00:00Z</dc:date>
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