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http://dspace-roma3.caspur.it:80
The DSpace digital repository system captures, stores, indexes, preserves, and distributes digital research material.2013-06-19T15:51:02ZAgglomeration process in thin silicon-, strained silicon-, and silicongermanium-on-insulator substrates
http://hdl.handle.net/2307/344
<Title>Agglomeration process in thin silicon-, strained silicon-, and silicongermanium-on-insulator substrates</Title>
<Authors>Capellini, Giovanni; Ciasca, Gabriele; De Seta, Monica; Notargiacomo, Andrea; Evangelisti, Florestano; Nardone, Michele</Authors>
<Issue Date>2009-05</Issue Date>
<Is part of>Journal of applied physics</Is part of>
<Volume>105</Volume>
<Pages>093525</Pages>
<Abstract>In this paper we present a comparative study of the agglomeration process in silicon-on-insulator (SOI), silicon germanium-om-insulator(SGOI), and strained SOI (SSOI) thin layers under thermal annealing inultrahigh vacuum. In particular, we provide the first evidence and characterization of agglomeration in SGOI and SSOI substrates. A common agglomeration dynamics is observed in all the substrates investigated,with the semiconductor-on-insulator layer thickness being the main parameter governing it. These findings provide a better understanding of the surface-energy-driven dewetting phenomenon in semiconductor layers and allow us to single out the influence of the surface and stress energies on the void formation and evolution, as well as on the size and density of the agglomerated islands.</Abstract>2009-04-30T22:00:00ZIon beam assisted processes for Pt nanoelectrode fabrication onto 1-Dnanostructures
http://hdl.handle.net/2307/335
<Title>Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-Dnanostructures</Title>
<Authors>Notargiacomo, Andrea; Di Gaspare, Luciana; Evangelisti, Florestano</Authors>
<Issue Date>2009-08</Issue Date>
<Is part of>Superlattices and microstructures</Is part of>
<Volume>46</Volume>
<Pages>149-152</Pages>
<Abstract>We present morphological and electrical characterizations of thin andnarrow resistors obtained by focused ion beam assisted deposition of Ptbased material.For thin and narrow depositions the measured thickness and width aresignificantly different from the nominal values. From leakage tests wefound that in order to have electrically insulated parallel resistorsat room temperature, it is mandatory that the Pt-halo, which resultsfrom the deposition procedure, has a thickness well below 6 nm. (C)2008 Elsevier Ltd. All rights reserved.</Abstract>2009-07-31T22:00:00Z