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Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/336

Title: Study of the Coupling of Terahertz Radiation to HeterostructureTransistors with a Free Electron Laser Source
Authors: Ortolani, Michele
Di Gaspare, Alessandra
Giovine, Ennio
Evangelisti, Florestano
Foglietti, Vittorio
Doria, Andrea
Gallerano, Gian Piero
Giovenale, Emilio
Messina, Giovanni
Spassovsky, Ivan
Lanzieri, Claudio
Peroni, Marco
Cetronio, Antonio
Issue Date: Dec-2009
Publisher: Springer US, Boston
Abstract: High electron mobility transistors can work as room-temperature directdetectors of radiation at frequency much higher than their cutofffrequency. Here, we present a tool based on a Free Electron Lasersource to study the detection mechanism and the coupling of the highfrequency signal into the transistor channel. We performed a mappingover a wide area of the coupling of 0.15 THz radiation to an AlGaN/GaNtransistors with cut-off frequency of 30 GHz. Local,polarization-dependent irradiation allowed
URI: http://hdl.handle.net/2307/336
ISSN: 1866-6892
DOI: 10.1007/s10762-009-9567-6
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

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