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Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/344

Title: Agglomeration process in thin silicon-, strained silicon-, and silicongermanium-on-insulator substrates
Authors: Capellini, Giovanni
Ciasca, Gabriele
De Seta, Monica
Notargiacomo, Andrea
Evangelisti, Florestano
Nardone, Michele
Keywords: BURIED SIO2
VOLTAGE
GROWTH
LAYER
FILMS
SIGE
Issue Date: May-2009
Publisher: American Institute of Physics
Abstract: In this paper we present a comparative study of the agglomeration process in silicon-on-insulator (SOI), silicon germanium-om-insulator(SGOI), and strained SOI (SSOI) thin layers under thermal annealing inultrahigh vacuum. In particular, we provide the first evidence and characterization of agglomeration in SGOI and SSOI substrates. A common agglomeration dynamics is observed in all the substrates investigated,with the semiconductor-on-insulator layer thickness being the main parameter governing
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URI: http://hdl.handle.net/2307/344
ISSN: 0021-8979
DOI: 10.1063/1.3117837
Appears in Collections:A - Articolo su rivista
Dipartimento di Fisica 'Edoardo Amaldi'

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