Università degli Studi di Roma 3 ArcA diA
Archivio Aperto di Ateneo

ArcAdiA >
Tipologia di Documenti >
A - Articolo su rivista >

Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/363

Title: Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate
Authors: Alonso, J.
Fdez-Gubieda, M. L.
Sarmiento, G.
Barandiaran, J. M.
Svalov, A.
Orue, I.
Chaboy, J.
Fernandez Barquin, L.
Meneghini, Carlo
Neisius, T.
Kawamura, N.
Keywords: Heterostructures
Issue Date: 25-Aug-2009
Publisher: American Institute of Physics
Abstract: FexAg100-x granular thin films, being 20 < x < 70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200 < T < 300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy
URI: http://hdl.handle.net/2307/363
ISSN: 0003-6951
DOI: 10.1063/1.3205124
Appears in Collections:A - Articolo su rivista
X_Dipartimento di Fisica 'Edoardo Amaldi'

Files in This Item:

File Description SizeFormat
a88_FeAg_2009.pdfsolo archivio234.93 kBAdobe PDF
Restrict Access. You can Request a copy!

This item is protected by original copyright

Recommend this item

SFX Query

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Università degli Studi RomaTre SBA - Sistema Bibliotecario di Ateneo ICT support by CINECA