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Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/406

Title: Atomic-scale patterning of hydrogen terminated Ge(001) by scanningtunneling microscopy
Authors: Scappucci, Giordano
Capellini, Giovanni
Lee, W. C. T.
Simmons, M. Y.
Keywords: GE(100) SURFACES
DEVICE FABRICATION
PROBE MICROSCOPY
SILICON
LITHOGRAPHY
TEMPERATURE
DESORPTION
SI(100)
MOSFETS
STM
Issue Date: Dec-2009
Publisher: IOP Publishing LTD
Abstract: In this paper we demonstrate atomic-scale lithography on hydrogenterminated Ge(001). The lithographic patterns were obtained byselectively desorbing hydrogen atoms from a H resist layer adsorbed ona clean, atomically flat Ge(001) surface with a scanning tunnelingmicroscope tip operating in ultra-high vacuum. The influence of thetip-to-sample bias on the lithographic process have been investigated.Lithographic patterns with feature-sizes from 200 to 1.8 nm have beenachieved by varying the tip-to-
...more
URI: http://hdl.handle.net/2307/406
ISSN: 0957-4484
DOI: 10.1088/0957-4484/20/49/495302
???metadata.dc.identifier.url???: http://arxiv.org/abs/0912.0754
Appears in Collections:A - Articolo su rivista
Dipartimento di Fisica 'Edoardo Amaldi'

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