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Please use this identifier to cite or link to this item: http://hdl.handle.net/2307/663

Title: Germanium on Silicon Near-Infrared Photodetectors
Authors: Sorianello, Vito
Tutor: Colace, Lorenzo
Issue Date: 23-Apr-2010
Publisher: Università degli studi Roma Tre
Abstract: In recent years, the of Germanium on Silicon approach has been recognized as the best alternative to the well-established III-V technology for the fabrication of high performance near-infrared photodetectors. Recent results demonstrate that Ge heteroepitaxy on Si is by now mature to compete with standard III-V devices. Unfortunately, the integration of Ge-on-Si technology in standard CMOS process flows is still an open challenge due to the sophisticated growth techniques as well as the high t
URI: http://hdl.handle.net/2307/663
Appears in Collections:X_Dipartimento di Ingegneria elettronica
T - Tesi di dottorato

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